Home About Social Event Program Committees Registration Location

Program >> Carlos Galup (UFSC)


Speaker
Carlos Galup (UFSC)

Title
Charge-based MOSFET models

Abstract
This seminar on analog MOS circuits describes an accurate but simple charge-based MOS transistor model that narrows the gap between hand design and simulation results. Instead of the usual approach of furnishing separate analytical formulas for the strong and weak inversion regions of the MOS transistor, we provide simple formulas which are valid in all operating regions, including moderate inversion. This unified design approach, which is particularly suitable for analog design in advanced CMOS technologies, allows the insightful exploration of the design space. We present large- and small-signal models of the MOSFET for low and high frequencies which are valid in all operating regions. The important concept of inversion level is developed and explicit expressions for all large- and small-signal parameters of transistors in terms of the inversion levels are provided. Finally, we will show comparisons between hand designs and computer simulations with charge-based models (EKV and BSIM6).


SHORT CVs
Carlos Galup-Montoro studied engineering sciences at the University of the Republic, Montevideo, Uruguay, and electronic engineering at the National Polytechnic School of Grenoble (INPG), France. He received an engineering degree in electronics in 1979 and a doctorate degree in 1982, both from INPG. From 1982 to 1989 he was with the University of São Paulo, Brazil, where he was engaged in junction field effect transistor (JFET) fabrication and analog circuit design. Since 1990, he has been with the Electrical and Electronics Engineering Department, Federal University of Santa Catarina, Florianópolis, Brazil where he is now a professor. From August 1997 to February 1998 he was a research associate with the Analog Mixed Signal Group, Texas A&M University. From August 2008 to July 2009 he was a visiting scholar at UC Berkeley. His main research interests and expertise are in field effect transistor and sensor modeling and analog and mixed signal circuit design.