Publicado em: 10/09/2013
Dissertação de Mestrado em Microeletrônica
UNIVERSIDADE FEDERAL DO RIO GRANDE DO SUL
INSTITUTO DE INFORMÁTICA
PROGRAMA DE POS-GRADUAÇÃO EM COMPUTAÇÃO
———————————————————
DEFESA DE DISSERTAÇÃO DE MESTRADO
Aluno: Kleber Hugo Stangherlin
Orientador: Prof. Dr. Sergio Bampi
Coorientador: Prof. Dr. Valter Roesler
Titulo: Energy and Speed Exploration in Digital CMOS Circuits in the Near-threshold Regime for Very-Wide Voltage-Frequency Scaling
Linha de Pesquisa: Microeletrônica
Data: 16/09/2013
Hora: 14h
Local: Auditório Inferior. Prédio 43413(67) – Instituto de Informática
Banca Examinadora:
Prof. Dr. Renato Perez Ribas (UFRGS)
Prof. Dr. Ricardo Augusto da Luz Reis (UFRGS)
Prof. Dr. Volnei Antonio Pedroni (UTFPR)
Presidente da Banca: Prof. Dr. Sergio Bampi
Resumo: This thesis assesses the benefits and drawbacks associated with a very wide range of frequency when operation at near-threshold is considered. Scaling down the supply voltage in digital CMOS circuits presents great benefits in terms of power reduction. Such scaling comes with a performance penalty, hence in digital synchronous circuits the reduction in frequency of operation follows, for a given circuit layout, the VDD reduction.
Minimum-energy operation of digital CMOS circuits is commonly associated to the sub-VT regime, carrying huge performance and variability penalties. This thesis shows that it is possible to achieve 8X higher energy-efficiency with a very-wide range of dynamic voltage-frequency scaling, from nominal voltages down to the lower boundary of near-VT operation. As part of this study, a CMOS digital cell-library for such wide range of frequencies was developed.
The cell-library is exercised in a 65nm commercial PDK and targets near-VT operation, mitigating the variability effects without compromising the design in terms of area and energy at strong inversion. For near-VT or sub-VT operation the cells have to be designed with few stacked transistors. Our study shows that good performance in terms of static-noise margins is obtained for a constrained set of cells, for which a maximum of 2-stacked transistors are allowed. In this set we include master-slave registers.
We report results for medium complexity designs which include a 25kgates notch filter, a 20kgates 8051 compatible core, and 4-combinational/4-sequential ISCAS benchmark circuits. In this work the maximum frequency attainable at each supply for a wide variation of voltage is studied from 150mV up to nominal voltage (1.2V). The sub-VT operation is shown to hold the minimum energy-point at roughly 0.29V, which represents a 2X energy-saving compared to the near-VT regime. Although energy-efficiency peaks in sub-VT for the circuits studied, we also show that in this ultra-low Vdd the circuit timing and power suffer from substantially increased variability impact and a 30X performance drawback, with respect to near-VT.
Palavras-chave: voltage-frequency scaling, energy-efficiency, power savings, near-threshold.
Método de Bayes, Segmentação de pele, Segmentação de lábios, Operadores Morfológicos, Cadeia de Markov Ocultas.