Publicado em: 21/03/2014

Palestra sobre Desenvolvimento de Sensores em Silício para Detecção de Gases

Palestra sobre Desenvolvimento de Sensores em Silício para Detecção de Gases No dia 21 de março, os professores Nikolay Samotaev e Prof. Boris Podlepetsky da National Research Nuclear University (MEPhI) – Russia, ministram palestras no Instituto de Informática, às 14h30min, no Auditório do prédio 67.

Data: 21 de março de 2014 (sexta-feira)
Local: Auditorio do Instituto de Informatica (predio novo – 67)
Horario: 14:30h

Palestrantes: Prof. Nikolay Samotaev e Prof. Boris Podlepetsky da National Research Nuclear University (MEPhI) – Russia
– Presentation of the National Research Nuclear University “MEPhI” and collaboration topics

– History of development Iom mobile spectrometry in MEPhI

Abstract: Successful clinical tests device based on the Metal Insulator Semiconductor Field Effect (MIS-FE) gas sensor for diagnostics of Helicobacter pylori infection (HP-infection) are conducted by a method of the breath test. Method is based on detecting increase concentration of ammonia in exhaled air by the patient after reception water solution of Carbamide. Stability work the device is based on high sensitivity and stability of the especially developed MIS-FE gas sensor to Ammonia and system of gas sampling.

Microhotplate for gas metal oxide gas sensors (ceramic and silicon technology)

Abstract: The integrated hydrogen sensors with palladium-gate MISFET sensing element have been developed and investigated. The electron irradiation influence on hydrogen sensitivity of these sensors have been studied. The threshold voltage of MISFETs as a function of hydrogen concentration were determined before and after each irradiations. It is found that this functions are monotonically drifting to 0.7 V under radiation doses up to ~ 700 Gy and after following irradiations the hydrogen sensitivity are steadily decreasing. The maximum radiation drift of the initial threshold voltages (at zero hydrogen concentration) was equal 1.6 V under doses ~ 4000 Gy. The maximum radiation sensitivity ~ 0.2 mV/Gy. According to represented models the hydrogen sensitivity should be decreased to zero after irradiation by doses more then 15 kGy. The ionizing radiation doses less then 5 Gy are not dangerous for these sensors.